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SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF148/D
The RF MOSFET Line
RF Power Field-Effect Transistor
N-Channel Enhancement-Mode
Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. * Superior High Order IMD * Specified 50 Volts, 30 MHz Characteristics Output Power = 30 Watts Power Gain = 18 dB (Typ) Efficiency = 40% (Typ) * IMD(d3) (30 W PEP) -- - 35 dB (Typ) * IMD(d11) (30 W PEP) -- - 60 dB (Typ) * 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR * Lower Reverse Transfer Capacitance (3.0 pF Typical)
D
MRF148A
30 W, to 175 MHz N-CHANNEL MOS LINEAR RF POWER FET
G S CASE 211-07, STYLE 2
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 120 120 40 6.0 115 0.66 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.52 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Replaces MRF148/D
1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 10 mA) Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) Gate-Body Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 125 -- -- -- -- -- -- 1.0 100 Vdc mAdc nAdc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 10 mA) Drain-Source On-Voltage (VGS = 10 V, ID = 2.5 A) Forward Transconductance (VDS = 10 V, ID = 2.5 A) VGS(th) VDS(on) gfs 1.0 1.0 0.8 2.5 3.0 1.2 5.0 5.0 -- Vdc Vdc mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss Coss Crss -- -- -- 62 35 3.0 -- -- -- pF pF pF
FUNCTIONAL TESTS (SSB)
Common Source Amplifier Power Gain (VDD = 50 V, Pout = 30 W (PEP), IDQ = 100 mA) Drain Efficiency (VDD = 50 V, f = 30 MHz, IDQ = 100 mA) Intermodulation Distortion (VDD = 50 V, Pout = 30 W (PEP), f = 30; 30.001 MHz, IDQ = 100 mA) Load Mismatch (VDD = 50 V, Pout = 30 W (PEP), f = 30; 30.001 MHz, IDQ = 100 mA, VSWR 30:1 at all Phase Angles) (30 MHz) (175 MHz) (30 W PEP) (30 W CW) Gps -- -- -- -- -- -- 18 15 40 50 - 35 - 60 -- -- -- -- -- -- dB % dB IMD(d3) IMD(d11) No Degradation in Output Power
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain (VDD = 50 V, Pout = 10 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 1.0 A) GPS IMD(d3) IMD(d9 - 13) -- -- -- 20 - 50 - 70 -- -- -- dB
NOTE: 1. To MIL-STD-1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. L1 BIAS + 0 - 10 V - C1 R1 DUT T2 RF INPUT T1 R3 C8 R2 C2 RF OUTPUT C4 C5 L2 + C6 + C7 - 50 V
C3
R4 R1, R2 -- 200 , 1/2 W Carbon R3 -- 4.7 , 1/2 W Carbon R4 -- 470 , 1.0 W Carbon T1 -- 4:1 Impedance Transformer T2 -- 1:2 Impedance Transformer
C1, C2, C3, C4, C5, C6 -- 0.1 F Ceramic Chip or Equivalent C7 -- 10 F, 100 V Electrolytic C8 -- 100 pF Dipped Mica L1 -- VK200 20/4B Ferrite Choke or Equivalent (3.0 H) L2 -- Ferrite Bead(s), 2.0 H
Figure 1. 2.0 to 50 MHz Broadband Test Circuit
Replaces MRF148/D
2
25 Pout , OUTPUT POWER (WATTS)
60 VDD = 50 V 40 V IDQ = 100 mA 0 60 30 MHz IDQ = 100 mA 1 1.5 2 2.5 Pin, INPUT POWER (WATTS) VDS = 30 V VDS = 15 V 4 + 50 Vdc + C5 C7 L1 C6 C1 T1 RF OUTPUT 50 12.5 T1 -- 4:1 Impedance Ratio T1 -- Transformer, Line T1 -- Impedance = 25 40 20 VDD = 50 V 40 V 150 MHz 40 20
20 POWER GAIN (dB)
15
10
VDD = 50 V IDQ = 100 mA Pout = 30 W (PEP)
5
0
2
5
10
20
50
100
200
0
0
0.5
f, FREQUENCY (MHz)
Figure 2. Power Gain versus Frequency
- 30 d3 - 40 d5 - 50 VDD = 50 V, IDQ = 100 mA, TONE SEPARATION 1 kHz - 30 - 40 d3 d5 10 20 30 Pout, OUTPUT POWER (WATTS PEP) 30 MHz 150 MHz 2000 f T, UNITY GAIN FREQUENCY (MHz)
Figure 3. Output Power versus Input Power
IMD, INTERMODULATION DISTORTION (dB)
1000
- 50 0
40
0
0
1
2 3 ID, DRAIN CURRENT (AMPS)
Figure 4. IMD versus Pout
Figure 5. Common Source Unity Gain Frequency versus Drain Current
+ BIAS 0-6 V C3 C2
R2 RFC1 C4 L2 DUT
RF INPUT
R1
C1 -- 91 pF Unelco Type MCM 01/010 C2, C4 -- 0.1 F Erie Red Cap C3 -- Allen Bradley 680 pF Feed Thru C5 -- 1.0 F, 50 Vdc Electrolytic C6 -- 15 pF Unelco Type J101 C7 -- 24 pF Unelco Type MCM 01/010 L1 -- 2 Turns #18 AWG, 5/16 ID
L2 -- 4 Turns #18 AWG, 5/16 ID R1 -- 1.0 Ohm, 1/4 W Carbon R2 -- 2000 Ohm, 1/4 W Carbon RFC1 -- VK200 21/4B T1 -- 4:1 Transformer, 1.75 Subminiature T1 -- Coaxial Cable
Figure 6. 150 MHz Test Circuit
Replaces MRF148/D
3
2 I DS , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS)
10 7 5 3 2 TC = 25C 1 0.7 0.5 0.3 0.2
1
VDS = 10 V gfs = 1.2 mho 0
0
1
2 3 4 5 6 7 8 VGS, GATE-SOURCE VOLTAGE (VOLTS)
9
10
0.1 0.2
0.4
0.7 1 2 4 7 10 20 40 VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
70 100 200
Figure 7. Gate Voltage versus Drain Current
Figure 8. DC Safe Operating Area (SOA)
175 150 50 30 15 7.0 4.0 f = 2.0 MHz ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. 175 ZOL* f = 2.0 MHz Zin VDD = 50 V IDQ = 100 mA Pout = 30 W PEP Gate Shunted By 100
Figure 9. Impedance Coordinates -- 50 Ohm Characteristic Impedance
Replaces MRF148/D
4
RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate-source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended.
DRAIN Cgd GATE Cds Cgs Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd
SOURCE
LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 5 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors.
EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY
Collector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V(BR)CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VBE(on) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cib . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cob . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . hfe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RCE(sat) = Drain Source Gate V(BR)DSS VDGO ID IDSS IGSS VGS(th) VDS(on) Ciss Coss gfs
VDS(on) VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . r DS(on) = ID IC
Replaces MRF148/D
5
PACKAGE DIMENSIONS
A U M Q
1 4
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
M
DIM A B C D E H J K M Q R S U STYLE 2: PIN 1. 2. 3. 4. SEATING PLANE
R
2 3
B
S
D K
INCHES MIN MAX 0.960 0.990 0.370 0.390 0.229 0.281 0.215 0.235 0.085 0.105 0.150 0.108 0.004 0.006 0.395 0.405 40 _ 50 _ 0.113 0.130 0.245 0.255 0.790 0.810 0.720 0.730
MILLIMETERS MIN MAX 24.39 25.14 9.40 9.90 5.82 7.13 5.47 5.96 2.16 2.66 3.81 4.57 0.11 0.15 10.04 10.28 40 _ 50 _ 2.88 3.30 6.23 6.47 20.07 20.57 18.29 18.54
J H C E
SOURCE GATE SOURCE DRAIN
CASE 211-07 ISSUE N
Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Replaces MRF148/D
6

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